ZXTN25012EZ

ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V www.DataSheet4U.com hFE > 500 IC(cont) = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description Packaged in the SOT89 outline this new ultra high gain, low saturation 12V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions C B Features 6.5A continuous current Up to 15A peak current Very low saturation voltages 6V reverse blocking voltage E Applications LED driving Motor driving Boost converters Royer converters Camera strobe MOSFET gate drivers E C C B Pinout - top view Ordering information Device ZXTN25012EZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Device marking 1K7 Issue 1 - December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN25012EZ Absolute maximum and thermal ratings Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Collector voltage (reverse blocking) Emitter-Base voltage www.DataSheet4U.com Continuous Symbol VCBO VCEO VECX VEBO IC IB ICM PD PD PD PD PD Tj, Tstg Limit 20 12 6 7 6.5 1 15 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 19.2 153 -55 to +150 Unit V V V V A A A W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C Collector current(c) Base current Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating fac...