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STF8NM60N Dataheets PDF



Part Number STF8NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STF8NM60N DatasheetSTF8NM60N Datasheet (PDF)

STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input.

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STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking D8NM60N D8NM60N-1 F8NM60N P8NM60N Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube Order code STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N January 2008 Rev 2 1/17 www.st.com 17 Contents STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 www.DataSheet4U.com 3 Test circuit ................................................ 9 4 5 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220 DPAK/IPAK 600 ± 25 7 4.3 28 70 -15 -55 to 150 7 (1) 4.3 (1) 28 (1) 25 2500 Unit TO-220FP V V A A A W V V/ns °C VDS www.DataSheet4U.com Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 °C) Peak diode recovery voltage slope Operating junction temperature Storage temperature VGS ID ID IDM (2) PTOT VISO dv/dt (3) Tj Tstg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 7A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Value Parameter TO-220 DPAK/IPAK 1.78 62.5 300 Unit TO-220FP 5 °C/W °C/W °C Rthj-case Rthj-amb Tl Thermal resistance junction-case Thermal resistance junction-amb Maximum lead temperature for soldering purpose Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Max value 2.5 200 Unit A mJ 3/17 Electrical characteristics STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD = 480 V, ID = 7 A, VGS =10 V VDS = Max rating, VDS = Max rating,Tc = 125 °C VGS = ±20 V VDS = VGS, ID = 250 µA VGS = 10V, ID = 3.5 A 2 3 0.56 Min. 600 38 1 100 ±100 4 0.65 Typ. Max. Unit V V/ns µA µA nA V Ω www.DataSheet4U.com dv/dt(1) IDSS IGSS VGS(th) RDS(on) 1. Characteristics value at turn off on inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS = 15 V, ID= 3.5 A Min. Typ. Max. 15 560 37 2 153 Unit S pF pF pF pF VDS = 50 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 480 V f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain VDD = 480 V, ID = 7 A VGS = 10 V (see Figure 19) RG Qg Qgs Qgd 1. 6 Ω Total gate charge Gate-source charge Gate-drain charge 19 3 10 nC nC nC Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test c.


STD8NM60N-1 STF8NM60N STP8NM60N


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