Document
STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
Features
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Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω
ID
3
3 2 1
1 2
STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
7A 7A 7 A(1) 7A
IPAK
TO-220
1. Limited only by maximum temperature allowed ■ ■ ■
3 1
1 3 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
DPAK
TO-220FP
Application
■
Figure 1.
Internal schematic diagram
Switching applications
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking D8NM60N D8NM60N-1 F8NM60N P8NM60N Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube
Order code STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
January 2008
Rev 2
1/17
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Contents
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
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3
Test circuit
................................................ 9
4 5 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220 DPAK/IPAK 600 ± 25 7 4.3 28 70 -15 -55 to 150 7 (1) 4.3 (1) 28 (1) 25 2500 Unit TO-220FP V V A A A W V V/ns °C
VDS
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Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 °C) Peak diode recovery voltage slope Operating junction temperature Storage temperature
VGS ID ID IDM (2) PTOT VISO dv/dt (3) Tj Tstg
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 7A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value Parameter TO-220 DPAK/IPAK 1.78 62.5 300 Unit TO-220FP 5 °C/W °C/W °C
Rthj-case Rthj-amb Tl
Thermal resistance junction-case Thermal resistance junction-amb Maximum lead temperature for soldering purpose
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Max value 2.5 200 Unit A mJ
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Electrical characteristics
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified) Table 5.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD = 480 V, ID = 7 A, VGS =10 V VDS = Max rating, VDS = Max rating,Tc = 125 °C VGS = ±20 V VDS = VGS, ID = 250 µA VGS = 10V, ID = 3.5 A 2 3 0.56 Min. 600 38 1 100 ±100 4 0.65 Typ. Max. Unit V V/ns µA µA nA V Ω
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dv/dt(1)
IDSS IGSS VGS(th) RDS(on)
1.
Characteristics value at turn off on inductive load
Table 6.
Symbol gfs(1) Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS = 15 V, ID= 3.5 A Min. Typ. Max. 15 560 37 2 153 Unit S pF pF pF pF
VDS = 50 V, f = 1 MHz, VGS = 0
VGS = 0, VDS = 0 to 480 V f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain VDD = 480 V, ID = 7 A VGS = 10 V (see Figure 19)
RG Qg Qgs Qgd
1.
6
Ω
Total gate charge Gate-source charge Gate-drain charge
19 3 10
nC nC nC
Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test c.