MONOLITHIC DUAL PICO AMPERE DIODES
DPAD SERIES
Linear Integrated Systems
FEATURES
MONOLITHIC DUAL PICO AMPERE DIODES
Direct Replacement For SILICONIX DPA...
Description
DPAD SERIES
Linear Integrated Systems
FEATURES
MONOLITHIC DUAL PICO AMPERE DIODES
Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA
EXCELLENT CAPACITANCE MATCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) www.DataSheet4U.com Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (DPAD) Maximum Currents Forward Current (DPAD) 50mA 500mW -65 to +150 °C -55 to +135 °C
K1
DPAD
TO-72 BOTTOM VIEW A1
3 5
DPAD1
TO-78 BOTTOM VIEW C A1
4 3 5
∆CR ≤ 0.2pF
A2
K2
1
7
K2
K1
1
7
A2
SSTDPAD
SOIC K1 K1 A1 NC
1 2 3 4 8 7 6 5
K2 K2 A2 NC
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVR VF |CR1-CR2| CHARACTERISTIC Reverse Breakdown Voltage Forward Voltage Differential Capacitance (∆CR) Total Reverse Capacitance DPAD1 ALL OTHERS DPAD1 Crss DPAD2,5,10,20,50,100 SSTDPAD5,50,100 SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC (SST)DPAD1 (SST)DPAD2 (SST)DPAD5 IR Maximum Reverse 2 Leakage Current (SST)DPAD10 (SST)DPAD20 (SST)DPAD50 (SST)DPAD100 DPAD2 -1 -2 -5 -10 -20 -50 -100 -50 -100 -5 pA VR = -20V SSTDPAD2 UNITS CONDITIONS DPAD1 DPAD2,5,10,20,50,100 SSTDPAD5,50,100 MIN -45 -45 -30 0.8 1.5 0.2 0.5 0.8 2.0 4.0 pF VR = -5V, f = 1MHz V IR = -1µA IF = 1mA VR1 = VR2 = -5V, f = 1MHz TYP MAX UNITS CONDITIONS
Linear Integrated Systems
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