30V P-Channel MOSFET
AO4411
30V P-Channel MOSFET
General Description
Product Summary
The AO4411 uses advanced trench technology to provide...
Description
AO4411
30V P-Channel MOSFET
General Description
Product Summary
The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-30V -8A < 32mΩ < 55mΩ
Top View
D D D D
SOIC-8 Bottom View
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum -30 ±20 -8 -6.6 -40 23 26 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-Sta...
Similar Datasheet