AO4438

AO4438 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) The AO4438 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4438 is Pb-free (meets ROHS & Sony 259 specifications). AO4438L is a Green Product ordering option. AO4438 and AO4438L are electrically identical. D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 60 ±20 8.2 6.6 40 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4438 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8.2A Static Drain-Source On-Resistance VGS=4.5V, ID=7.6A gFS VSD IS Forward Transconductance VDS=5V, ID=8.2A IS=1A,VGS=0...