AO4441

AO4441 60V P-Channel MOSFET General Description Product Summary The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) -60V -4A < 100mW < 130mW Top View D D D D SOIC-8 Bottom View G S S S PIN 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG G Maximum -60 ±20 -4 -3.1 -20 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 24 54 21 Max 40 75 30 D S Units V V A W °C Units °C/W °C/W °C/W Rev.3.0: August 2019 www.aosmd.com Page 1 of 5 AO4441 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage VDS=-48V, VGS=0V VDS=0V, VGS= ±20V VDS=VGS, ID=-250mA TJ=55°C VGS=-10V, ID=-4A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A TJ=125°C gFS Forward Tran...