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AO4443 Dataheets PDF



Part Number AO4443
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 40V P-Channel MOSFET
Datasheet AO4443 DatasheetAO4443 Datasheet (PDF)

AO4443 40V P-Channel MOSFET General Description Product Summary The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) 100% UIS Tested 100% Rg Tested -40V -6A < 42mΩ < 63mΩ Top View D D D D SOIC-8 Bottom View G S S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Paramet.

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AO4443 40V P-Channel MOSFET General Description Product Summary The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) 100% UIS Tested 100% Rg Tested -40V -6A < 42mΩ < 63mΩ Top View D D D D SOIC-8 Bottom View G S S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C VGS ID IDM IAS, IAR EAS, EAR PD Junction and Storage Temperature Range TJ, TSTG G Maximum -40 ±20 -6 -5 -40 20 20 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 5: June 2015 www.aosmd.com Page 1 of 5 AO4443 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-40V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6A VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -40 -1.5 40 -1 -5 ±100 -2 -2.6 35 53 46.5 17 -0.76 42 65 63 -1 -3.5 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 750 940 1175 pF 97 pF 72 pF 7 14 21 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 17.3 22 nC Qg(4.5V) Qgs Gate Source Charge VGS=-10V, VDS=-20V, ID=-6A 8.4 11 3.2 nC Qgd Gate Drain Charge 4.3 nC tD(on) Turn-On DelayTime 10.3 ns tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-20V, RL=3.35Ω, RGEN=3Ω 4.3 ns 39 ns tf Turn-Off Fall Time 46.5 ns trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 17 24 ns Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 11.5 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and d.


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