Document
AO4443
40V P-Channel MOSFET
General Description
Product Summary
The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V)
100% UIS Tested 100% Rg Tested
-40V -6A < 42mΩ < 63mΩ
Top View D
D
D
D
SOIC-8 Bottom View
G
S S S Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C Power Dissipation B TA=70°C
VGS
ID
IDM IAS, IAR EAS, EAR
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum -40 ±20 -6 -5 -40 20 20 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
D
S
Units V V A A mJ W °C
Units °C/W °C/W °C/W
Rev 5: June 2015
www.aosmd.com
Page 1 of 5
AO4443
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V VDS=-40V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
Forward Transconductance
VDS=-5V, ID=-6A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
-40
-1.5 40
-1 -5 ±100 -2 -2.6
35 53 46.5 17 -0.76
42 65 63
-1 -3.5
V
µA
nA V A
mΩ
mΩ S V A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz
750 940 1175 pF 97 pF 72 pF
7 14 21 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
17.3 22 nC
Qg(4.5V) Qgs
Gate Source Charge
VGS=-10V, VDS=-20V, ID=-6A
8.4 11 3.2 nC
Qgd Gate Drain Charge
4.3 nC
tD(on)
Turn-On DelayTime
10.3 ns
tr tD(off)
Turn-On Rise Time Turn-Off DelayTime
VGS=-10V, VDS=-20V, RL=3.35Ω, RGEN=3Ω
4.3 ns 39 ns
tf Turn-Off Fall Time
46.5 ns
trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs
17 24 ns
Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
11.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and d.