AO4446

AO4446 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Product ordering option. AO4446 and AO4446L are electrically identical. Features VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case B B Maximum 30 ±20 15 12 40 20 50 3 2.1 -55 to 150 Units V V A A mJ W °C TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 33 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4446 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=10V, I D=15A Static Drain-Source On-Resistance VGS=4....