AO4459

AO4459 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4459 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard www.DataSheet4U.com product AO4459 is Pb-free (meets ROHS & Sony 259 specifications). AO4459L is a Green Product ordering option. AO4459 and AO4459L are electrically identical . Features VDS (V) = -30V (V GS = -10V) ID = -6.5A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum -30 ±20 -6.5 -5.3 -30 3.1 2 -55 to 150 Units V V A W °C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 33 62 18 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4459 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V VGS=-10V, I D=-6.5A Static Drain-Source On-Resistance VGS=-4.5V, I D=-5A gFS VSD IS Forward Transconductance VDS=-...