2N3771 TRANSISTOR Datasheet

2N3771 Datasheet PDF, Equivalent


Part Number

2N3771

Description

(2N3771 / 2N3772) NPN HIGH POWER SILICON TRANSISTOR

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download 2N3771 Datasheet


2N3771
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
www.DataSheet4U.com
2N3771
2N3772
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 857 mW/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
2N3771 2N3772
40 60
50 100
7.0 7.0
7.5 5.0
30 20
6.0
150
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 200 mAdc
2N3771
2N3772
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBE = 100
2N3771
2N3772
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VBE = -1.5 Vdc
2N3771
2N3772
V(BR)CEX
Collector-Emitter Cutoff Current
VCE = 30 Vdc
2N3771
ICEO
VCE = 50 Vdc
Emitter-Base Cutoff Current
2N3772
VBE = 7.0 Vdc
2N3771
2N3772
IEBO
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 50 Vdc
2N3771
ICEX
VBE = 1.5 Vdc, VCE = 100 Vdc
2N3772
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
40 Vdc
60
45 Vdc
70
50 Vdc
90
5.0 mAdc
5.0
2.0 mAdc
500 µAdc
500
120101
Page 1 of 2

2N3771
2N3771, 2N3772 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min. Max. Unit
Forward-Current Transfer Ratio
IC = 15 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
IC = 1.0 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.5 Adc
IC = 30 Adc, IB = 6.0 Adc
IC = 10 Adc, IB = 1.0 Adc
www.DataSheet4U.com IC = 20 Adc, IB = 4.0 Adc
Base-Emitter Voltage (non-saturated)
IC = 15 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
2N3771
2N3772
Both
2N3771
2N3771
2N3772
2N3772
2N3771
2N3772
hFE
VCE(sat)
VBE
15 60
15 60
40 -
1.5
4.0 Vdc
1.2
4.0
2.3 Vdc
2.0
DYNAMIC CHARACTERISTICS
Small-Signal Cutoff Frequency
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
40
hfe
6.0 30
Forward-Current Transfer
IC = 1.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
hfe
Cobo
1200
pƒ
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 15 Adc; IB1= 1.5 Adc
VCC = 30 Vdc; IC = 10 Adc; IB1= 1.0 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 15 Adc; IB1 =1.5 Adc; IB2 = -1.5 Adc
VCC = 30 Vdc; IC = 10 Adc; IB1 = 1.0 Adc; IB2 = -1.0 Adc
2N3771
2N3772
2N3771
2N3772
ton
toff
10 µs
8.0
12 µs
10
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1 (2N3771 only)
VCE = 5.0 Vdc, IC = 30 Adc
Test 2 (2N3771 only)
VCE = 40 Vdc, IC = 3.75 Adc
Test 3 (2N3772 only)
VCE = 7.5 Vdc, IC = 20 Adc
Test 4 (2N3772 only)
VCE = 60 Vdc, IC = 2.5 Adc
Clamped Inductive
TA = +250C; duty cycle 10%; RS = 0.1
Test 1 (2N3771 only)
RBB1 = 2.0 ; VBB1 14 Vdc; RBB2 = 100 ; VCC = 20±5.0 Vdc; VBB2 = 1.5 Vdc; IC = 30 Adc; RL 0.67 ; L= 5.0 mH
Test 2 (2N3772 only)
RBB1 = 2.0 ; VBB1 10 Vdc; RBB2 = 100 ; VCC = 40±5.0 Vdc; VBB2 = 1.5 Vdc; IC = 20 Adc; RL 2.0 ; L= 5.0 mH
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Features TECHNICAL DATA NPN HIGH POWER SILICON TR ANSISTOR Qualified per MIL-PRF-19500/51 8 Devices www.DataSheet4U.com Qualifie d Level 2N3772 JANTX JANTXV 2N3771 MA XIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage Base Current Collector Cu rrent Total Power Dissipation Symbol V CEO VCBO VEBO IB IC PT TJ, Tstg 2N3771 40 50 7.0 7.5 30 2N3772 60 100 7.0 5. 0 20 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Oper ating & Storage Junction Temperature Ra nge 1) Derate linearly 34.2 mW/0C for T A > +250C 2) Derate linearly 857 mW/0C for TC > +250C 6.0 150 -65 to +200 TO -3* (TO-204AA) *See Appendix A for Pack age Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Cha racteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdo wn Voltage IC = 200 mAdc Collector-Emit ter Breakdown Voltage IC = 200 mAdc, RB E = 100 Ω Collector-Emitter Breakdown Voltage IC = 200 mAdc, VBE = -1.5 Vdc Collector-Emitter Cutoff C.
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