2SC1505 Transistor Datasheet

2SC1505 Datasheet PDF, Equivalent


Part Number

2SC1505

Description

Silicon Power Transistor

Manufacture

JMnic

Total Page 3 Pages
Datasheet
Download 2SC1505 Datasheet


2SC1505
JMnic
Silicon NPN Power Transistors
Product Specification
2SC1505
DESCRIPTION
With TO-220 package
High collector-emitter voltage
: VCEO=300V
High frequency:fT=40MHz(Min)
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For use in line-operated color TV chroma
output circuits and sound output circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PT Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
300
300
7
0.2
1.2
15
150
-55~150
UNIT
V
V
V
A
W

2SC1505
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=10 A ;IE=0
V(BR)CEO
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V(BR)EBO
Collector-emitter breakdown voltage IC=1mA ;IB=0
Emitter-base breakdown voltage
IE=10 A ;IC=0
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
ICBO Collector cut-off current
VCB=200V;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=10mA ; VCE=10V
COB Output capacitance
IE=0; VCB=50V;f=1MHz
fT Transition frequency
IC=10mA ; VCE=30V
‹ hFE classifications
ML
K
40-80 60-120 100-200
Product Specification
2SC1505
MIN TYP. MAX UNIT
300 V
300 V
7V
2.0 V
0.1 A
0.1 A
40 200
4.5 pF
50 80
MHz
2


Features JMnic Product Specification Silicon NP N Power Transistors 2SC1505 DESCRIPTI ON ¡¤ With TO-220 package ¡¤ High c ollector-emitter voltage : VCEO=300V ¡ ¤ High frequency:fT=40MHz(Min) APPLICA TIONS www.DataSheet4U.com ¡¤ For use in line-operated color TV chroma output circuits and sound output circuits. PI NNING PIN 1 2 3 Base Collector;connecte d to mounting base Emitter Fig.1 simpli fied outline (TO-220) and symbol DESCRI PTION Absolute maximum ratings (Ta=25 æ ) SYMBOL VCBO VCEO VEBO IC PARAMETE R Collector-base voltage Collector-emit ter voltage Emitter-base voltage Collec tor current Ta=25¡æ PT Collector powe r dissipation TC=25¡æ Tj Tstg Junctio n temperature Storage temperature 15 15 0 -55~150 ¡æ ¡æ Open emitter Open b ase Open collector CONDITIONS VALUE 300 300 7 0.2 1.2 W UNIT V V V A JMnic P roduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Co llector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base bre.
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