Silicon Power Transistor
2SC1505
NPN
2SC1505
www.DataSheet4U.com
(1.5 W)
2SC1505 TO-220AB
VCBO = 300 V Cob = 4.5 pF ...
Silicon Power
Transistor
2SC1505
NPN
2SC1505
www.DataSheet4U.com
(1.5 W)
2SC1505 TO-220AB
VCBO = 300 V Cob = 4.5 pF MAX. (TO-220AB)
TA = 25°C
– – –
VCBO VCEO VEBO IC PT TA = 25°C TC = 25°C Tj Tstg
300 300 7.0 200 1.2 15 150 –55 +150
V V V mA W W °C °C
(
D14860JJ3V0DS00 TC-5084B October 2000 NS
3 CP(K)
1982, 2000
2SC1505
TA = 25°C
MIN. ICBO IEBO hFE VCE(sat) fT Cob VCB = 200 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 10 V, IC = 10 mA IC = 50 mA, IB = 5.0 mA VCE = 30 V, IE = –10 mA 50 80 4.5 40 80 TYP . MAX. 100 100 200 2.0 V MHz pF nA nA
VCB = 50 V, IE = 0 A, f = 1.0 MHz
PW
350 µs, Duty Cycle
2%
www.DataSheet4U.com hFE
M hFE 40 80 60
L 120 100
K 200
2
D14860JJ3V0DS00
2SC1505
TA = 25°C
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2 mm
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
16 14
1.2
PT (W)
100 TA (˚C) 150
PT (W)
12 10 8 6 4
50
25
1.0 0.8 0.6 0.4 0.2
50
10
0c
m2
0c
m2
cm 2
cm 2
m2
10 c
www.DataSheet4U.com
2 0 0 50
0 0 50 100 TA (˚C) 150
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 VCE = 5 V
IC (mA)
200
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
10 mA 9.0 mA 8.0 mA 7.0 mA 6.0 mA 5.0 mA
IC (mA)
160
160
mA 4.0 A 3.0 m A 2.0 m
IB = 1.0 mA
120
120
80
80
40
40
0
0
0
0.4
0.6
0.8 VBE (V)
1.0
0
2
4
6
8
10
12
14
16
VCE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 16 14
IC (mA)
160 µ A 140 µA 120 µ A 100 µA 80 µ A
DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 10 V
hFE
12 10 8 6 4
IB ...
