Document
SK20GH065
Absolute Maximum Ratings Symbol Conditions IGBT
4," % %<= 4&,"
$5 2 0/ 3 $5 2 80/ 3 %<=2 0 % 4 2 .77 4? 4&, @ 07 4? 4," A -77 4 $5 2 80/ 3 %C<=2 0 %C $5 2 80/ 3 $ 2 0/ 3 $ 2 ;7 3
$ 2 0/ 3+
Values
-77 09 8; 97 > 07 87
Units
4 : : : 4 B
SEMITOP 2
www.DataSheet4U.com
®
Inverse Diode
IGBT Module
SK20GH065
%C %C<=
$ 2 0/ 3 $ 2 ;7 3
0/ 8; 97
: : : :
Module
%<=" $15 !97 DDD E8/7 !97 DDD E80/ :+ 8 D 0/77 $ 4 3 3 4
Target Data
Features
Characteristics Symbol Conditions IGBT
4&, %," %&," 4,7 , 4, , , <5! %&$ <& 2 .7 G <& 2 .7 G 4 2 .774 %2 07: $5 2 80/ 3 4&,2>8/4 4&, 2 8/ 4 % 2 07 :+ 4&, 2 8/ 4 4&, 2 4,+ % 2 7+/ : 4&, 2 7 4+ 4, 2 4," 4, 2 7 4+ 4&, 2 07 4 $5 2 0/ 3 $5 2 0/ 3 $5 2 0/ 3 $5 2 80/ 3 $5 2 0/3 $5 2 80/3
$ 2 0/ 3+
min.
.
typ.
9
max.
/ 7+7F 807
Units
4 : : 4 4 G G 4 4 C C C H H
Typical Applications "
%1 "
)#"
!
"
#$! #
$ %&$
' (
)(
* + ,-./.0
8 8+8 // 0 0+0 8+8 7+87F 7+7-. 08 0; 7+8F7 07 7+9 8+F
$5 2 0/3
1D $5 2 80/3
1D
4, 2 0/+ 4&, 2 7 4
2 8 =*
IJK
GH
1
30-10-2006 DIL
© by SEMIKRON
SK20GH065
Characteristics Symbol Conditions Inverse Diode
4C 2 4, 4C7 C %C 2 07 :? 4&, 2 7 4 $5 2 0/ 3
1D $5 2 80/ 3
1D $5 2 0/ 3 $5 2 80/ 3 $5 2 0/ 3 $5 2 80/ 3 %C 2 : 4<2 .774 N 8L 8+F 0 $5 2 80/ 3 7+L .7 ..
min.
typ.
8+8+-
max.
Units
4 4 4 4 G G : B H IJK
SEMITOP® 2
www.DataSheet4U.com
%<<= M , <5! =
IGBT Module
SK20GH065
Target Data
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Features
Typical Applications "
%1 "
)#"
!
"
#$! #
$ %&$
' (
)(
* + ,-./.0
GH
2
30-10-2006 DIL
© by SEMIKRON
SK20GH065
www.DataSheet4U.com
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge .