CS55DZ

DATA SHEET CS55BZ CS55DZ SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS TO-92 CASE DESCRIPTION www.DataSheet4U.com The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed for applications requiring extremely low gate sensitivity. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL CS55BZ 200 0.8 10 0.24 2.0 0.1 1.0 8.0 -40 to +125 -40 to +125 200 100 CS55DZ 400 UNITS V A A A2s W W A V °C °C °C/W °C/W Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance Peak Repetitive Off-State Voltage RMS On-State Current (TC=60oC) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) VDRM,VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM Tstg TJ ΘJA ΘJC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL IDRM,IRRM IDRM,IRRM IGT IH VGT VTM dv/dt TEST CONDITIONS Rated VDRM,VRRM, RGK=1KΩ VD=12V RGK=1KΩ VD=12V ITM=1.0A MIN TYP MAX 1.00 100 20 5.00 0.8 1.70 25 µA µA mA V V V/µs UNITS µA Rated VDRM,VRRM, RGK=1KΩ, TC=125°C VD=.67 x VDRM, RGK=1KΩ, TC=125°C (SEE REVERSE SIDE) R1 CS55BZ / CS55DZ SILICON CONTROLLED RECTIFIER RMS ON-STATE CURRENT vs. CASE TEMPERATURE 1 IT (RMS), RMS ON-STATE CURRENT (A) 2 MAXIMUM ON-STATE CHARACTERISTICS ITM, ON-STATE CURRENT (A) 0.8 1.5 0.6 www.DataSheet4U.com 0.4 1 TC=125°C 0.5 TC=25°C 0.2 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C...