2SD2394
Transistors
For Power Amplification (60V, 3A)
2SD2394
zStructure NPN Silicon Triple Diffused Planar Transistor
...
2SD2394
Transistors
For Power Amplification (60V, 3A)
2SD2394
zStructure
NPN Silicon Triple Diffused Planar
Transistor
www.DataSheet4U.com
zExternal dimensions (Unit : mm)
TO-220FN
10.0
4.5
φ3.2
2.8
14.0
zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA.
(1)Base (2)Collector (3)Emitter
15.0
12.0
8.0 5.0
1.2
1.3
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
zApplications Low frequency amplifier
zComplements
PNP 2SB1565
NPN 2SD2394
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 80 60 7 3 6 2 25 150 −55 to +150 Unit V V V A(DC) A(Pulse)∗1 W(Ta=25°C) W(Tc=25°C) °C °C
zPackaging specifications and hFE
Package Type hFE 2SD2394 EF Code Basic ordering unit (pieces) Taping − 500
hFE values are classified as follows:
Item hFE E 100 to 200 F 160 to 320
Collector power dissipation Junction temperature Storage temperature
∗1 Pw=100ms, single pulse
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗1 Pulse test
Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob
Min. Typ. Max. Unit 60 80 7 − − − ...