ISP817X,ISP827X,ISP847X3,2,1 ISP817,ISP827,ISP847-3,-2,-1
LOW INPUT CURRENT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
l
APPROVALS UL recognised, File No. E91231
ISP817X3,2,1 ISP817-3,2,1
2.54 7.0 6.0 1 2
Dimensions in mm
4 3
'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : www.DataSheet4U.com - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P01102465 Fimko - Certificate No. FI18162 Semko - Reference No. 0202041/01-25 Demko - Certificate No. 311161-01 l BSI approved - Cetificate No. 8001 DESCRIPTION The ISP817-3,-2,-1, ISP827-3,-2,-1, ISP8473,-2,-1 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Low input current 0.5mA IF l High Current Transfer Ratio (50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO (70V min) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances
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1.2 5.08 4.08 7.62 4.0 3.0 0.5 3.0 13° Max 0.26
ISP827X3,2,1 0.5 ISP827-3,2,1
3.35
2.54
1 7.0 6.0 2 3 4 7.62 4.0 3.0 0.5
8 7 6 5
1.2 10.16 9.16
3.0 3.35 0.5
13° Max 0.26 1 2 3 4 5 7.0 6.0 6 7 8 7.62 13° Max 0.26 16 15 14 13 12 11 10 9
ISP847X3,2,1 ISP847-3,2,1
2.54
OPTION SM SURFACE MOUNT
OPTION G 7.62
1.2 20.32 19.32 4.0 3.0 0.5 3.0 0.5 3.35
0.6 0.1 10.46 9.86
1.25 0.75
0.26 10.16
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
3/3/03
ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail
[email protected] http://www.isocom.com
DB92239m-AAS/A6
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation
www.DataSheet4U.com
50mA 6V 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.67mW/ °C above 25°C)
70V 6V 150mW
200mW
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) 70 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISP817-3, ISP827-3, ISP847-3 ISP817-2, ISP827-2, ISP847-2 ISP817-1, ISP827-1, ISP847-1 Collector-emitter Saturation Voltage -3 -2 -1 Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf 70 100 50 50 0.4 0.4 0.4 MIN TYP MAX UNITS 1.2 1.4 10 V
µA
TEST CONDITION IF = 20mA VR = 4V IC = 1mA IE = 10µA VCE = 20V 0.5mA 1.0mA 0.5mA 1.0mA IF , IF , IF , IF , 0.4V 0.4V 0.4V 0.4V VCE VCE VCE VCE
V V nA
100
Coupled
% % % % V V V VRMS VPK Ω µs µs
0.5mA IF , 0.35mA IC 0.5mA IF , 0.25mA IC 1.0mA IF , 0.5mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 0.2mA,RL= 100Ω
4 3
18 18
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
3/3/03
DB92239m-AAS/A6
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 2.0 150 Collector current IC (mA) 1.6
Collector Current vs. Low Collector-emitter Voltage TA = 25°C
IF = 1mA 1.2 0.8 IF = 0.5mA 0.4 0
100
www.DataSheet4U.com50
0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 60 Relative current transfer ratio 50 Forward current IF (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 Current transfer ratio CTR (%) 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C )
3/3/03
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature
1.5
IF = 1mA VCE = 0.4V
1.0
0.5
0 -30
0
25
50
75
100
Ambient temperature TA ( °C ) Current Transfer Ratio vs. Forward Current 120
Collector-emitter saturation voltage VCE(SAT) (V)
IF = 1mA IC = 0.5mA
100 80 60 40 20 0 0.1 0.2 0.5 1 2 5 Forward current IF (mA)
DB92239m-AAS/A6
VCE = 0.4V TA = 25 °C
.