Document
APM3023NU
N-Channel Enhancement Mode MOSFET
Features
•
30V/30A, RDS(ON)=15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V
Pin Description
G
D
• Super High Dense Cell Design www.DataSheet4U.com • Reliable and Rugged • Lead Free Available (RoHS Compliant)
S
Top View of TO-252
D
Applications
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Power Management in Desktop Computer or DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM3023N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM3023N U :
APM3023N XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw
APM3023NU
Absolute Maximum Ratings
Symbol Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 30 ±20 150 -55 to 150 20 100 60 30* 20 50 20 2.5 W °C/W V °C °C A Unit
Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG
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IS
Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case
2
A A
Mounted on PCB of 1in Pad Area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 60 10 4 2.5 1 50 100 60 7 5 1.6 0.6 75 W °C/W W °C/W A A
Mounted on PCB of Minimum Footprint IDP ID PD RθJA
Note: * Current limited by bond wire.
300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient
A A
Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
2
www.anpec.com.tw
APM3023NU
Electrical Characteristics
(TA = 25°C unless otherwise noted)
Symbol Static Characteristics
Parameter
Test Condition
APM3023NU Min. Typ. Max.
Unit
BVDSS Drain-Source Breakdown Voltage IDSS
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VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=15A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=1.