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APM3023NV Dataheets PDF



Part Number APM3023NV
Manufacturers Anpec Electronics Coropration
Logo Anpec Electronics Coropration
Description N-Channel MOSFET
Datasheet APM3023NV DatasheetAPM3023NV Datasheet (PDF)

APM3023NV N-Channel Enhancement Mode MOSFET Features • 30V/7A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Pin Description • Super High Dense Cell Design www.DataSheet4U.com • Reliable and Rugged • Lead Free Available (RoHS Compliant) G D S Top View of SOT-223 (2) D Applications • • Switching Regulators Switching Converters (1) G S (3) N-Channel MOSFET Ordering and Marking Information APM 3023N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ack.

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APM3023NV N-Channel Enhancement Mode MOSFET Features • 30V/7A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Pin Description • Super High Dense Cell Design www.DataSheet4U.com • Reliable and Rugged • Lead Free Available (RoHS Compliant) G D S Top View of SOT-223 (2) D Applications • • Switching Regulators Switching Converters (1) G S (3) N-Channel MOSFET Ordering and Marking Information APM 3023N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ackage C ode V : S O T -2 2 3 O p e r a tin g J u n c tio n T e m p . R a n g e C : - 5 5 to 1 5 0 ° C H a n d lin g C o d e TU : T ube TR : Tape & R eel L e a d F re e C o d e L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e APM 3023N V: APM 3023N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM3023NV Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS ID* IDM* IS* www.DataSheet4U.com Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient 2 Rating 30 ±20 VGS=10V 7 28 1.5 150 -55 to 150 TA=25°C TA=100°C 1.47 0.58 85 Unit V A A °C W °C/W TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM3023NV Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=7A VGS=5V, IDS=5A ISD=1.5A, VGS=0V 30 1 30 1 1.5 15 22 0.8 2 ±100 20 28 1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 30 VDS=15V, VGS=10V, IDS=7A 5.8 3.8 39 nC Gate-Source Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM3023NV Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM3023NV Min. Typ. Max. Test Condition Unit Dynamic Characteristics RG Gate Resistance Ciss Coss www.DataSheet4U.com VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 2.5 830 145 15 11 17 37 20 18 26 54 30 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Crss td(ON) Tr td(OFF) Tf Notes: ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM3023NV Typical Characteristics Power Dissipation 1.6 1.4 1.2 8 7 6 Drain Current Ptot - Power (W) www.DataSheet4U.com ID - Drain Current (A) 1.0 0.8 0.6 0.4 0.2 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 5 4 3 2 1 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature Safe Operation Area Normalized Transient Thermal Resistance 50 im it Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 10 ID - Drain Current (A) Rd s( on )L 300us 1ms 0.1 0.02 0.01 0.05 1 10ms 100ms 0.1 1s DC 0.01 Single Pulse TA=25 C 0.01 0.01 0.1 o 1 10 100 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA :85 C/W 2 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM3023NV Typical Characteristics (Cont.) Output Characteristics 28 VGS=5, 6, 7, 8, 9, 10V 24 35 40 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 20 16 12 8 4 3V 0 30 25 20 15 10 5 0 VGS=10V VGS=5V www.DataSheet4U.com 4V 0 2 4 6 8 10 0 4 8 12 16 20 24 28 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 28 24 Gate Threshold Voltage 1.6 IDS =250µA 1.4 Normalized Threshold Voltage 5 ID - Drain Current (A) 20 16 12 8 4 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 Tj=125 C Tj=25 C o o Tj=-55 C o 0 1 2 3 4 0 25 50 75 100 125 150 VGS -.


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