Document
APM3023NV
N-Channel Enhancement Mode MOSFET
Features
•
30V/7A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V
Pin Description
• Super High Dense Cell Design www.DataSheet4U.com • Reliable and Rugged • Lead Free Available (RoHS Compliant)
G D S
Top View of SOT-223
(2) D
Applications
• •
Switching Regulators Switching Converters
(1) G
S (3)
N-Channel MOSFET
Ordering and Marking Information
APM 3023N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ackage C ode V : S O T -2 2 3 O p e r a tin g J u n c tio n T e m p . R a n g e C : - 5 5 to 1 5 0 ° C H a n d lin g C o d e TU : T ube TR : Tape & R eel L e a d F re e C o d e L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e
APM 3023N V:
APM 3023N XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw
APM3023NV
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol VDSS VGSS ID* IDM* IS*
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Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient
2
Rating 30 ±20 VGS=10V 7 28 1.5 150 -55 to 150 TA=25°C TA=100°C 1.47 0.58 85
Unit V A A °C W °C/W
TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
APM3023NV Min. Typ. Max.
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD
a a
VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=7A VGS=5V, IDS=5A ISD=1.5A, VGS=0V
30 1 30 1 1.5 15 22 0.8 2 ±100 20 28 1.3
V µA V nA mΩ V
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
30 VDS=15V, VGS=10V, IDS=7A 5.8 3.8
39 nC
Gate-Source Charge
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
2
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APM3023NV
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
APM3023NV Min. Typ. Max.
Test Condition
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss
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VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
2.5 830 145 15 11 17 37 20 18 26 54 30
Ω pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
Crss td(ON) Tr
td(OFF) Tf
Notes:
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
3
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APM3023NV
Typical Characteristics
Power Dissipation
1.6 1.4 1.2 8 7 6
Drain Current
Ptot - Power (W)
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ID - Drain Current (A)
1.0 0.8 0.6 0.4 0.2 0.0 TA=25 C 0 20 40 60 80 100 120 140 160
o
5 4 3 2 1 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (°C)
Tj - Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
50
im it
Thermal Transient Impedance
2 1
Duty = 0.5 0.2 0.1
10
ID - Drain Current (A)
Rd
s(
on )L
300us 1ms
0.1
0.02 0.01
0.05
1
10ms 100ms
0.1
1s DC
0.01
Single Pulse
TA=25 C 0.01 0.01 0.1
o
1
10
100
1E-3 1E-4 1E-3 0.01
Mounted on 1in pad o RθJA :85 C/W
2
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
4
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APM3023NV
Typical Characteristics (Cont.)
Output Characteristics
28 VGS=5, 6, 7, 8, 9, 10V 24 35 40
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
20 16 12 8 4 3V 0
30 25 20 15 10 5 0 VGS=10V VGS=5V
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4V
0
2
4
6
8
10
0
4
8
12
16
20
24
28
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
28 24
Gate Threshold Voltage
1.6 IDS =250µA 1.4
Normalized Threshold Voltage
5
ID - Drain Current (A)
20 16 12 8 4 0
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
Tj=125 C Tj=25 C
o
o
Tj=-55 C
o
0
1
2
3
4
0
25
50
75
100 125 150
VGS -.