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APM4220K Dataheets PDF



Part Number APM4220K
Manufacturers Anpec Electronics Coropration
Logo Anpec Electronics Coropration
Description N-Channel MOSFET
Datasheet APM4220K DatasheetAPM4220K Datasheet (PDF)

APM4220K N-Channel Enhancement Mode MOSFET Features • • • www.DataSheet4U.com • • • 25V/12A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) Pin Description D D D D S S S G Top View of SOP − 8 ( 5,6,7,8 ) DD DD Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S S S (1, 2, 3) (4) G N-Channel MOSFET Ordering and M.

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APM4220K N-Channel Enhancement Mode MOSFET Features • • • www.DataSheet4U.com • • • 25V/12A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) Pin Description D D D D S S S G Top View of SOP − 8 ( 5,6,7,8 ) DD DD Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S S S (1, 2, 3) (4) G N-Channel MOSFET Ordering and Marking Information APM 4220 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code APM 4220 K : APM 4220 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM4220K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* www.DataSheet4U.com (TA = 25°C unless otherwise noted) Rating 25 ±20 VGS=10V 12 50 3 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 W °C/W A °C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 2 TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4220K Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=15V 25 50 mJ Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS VGS(th) IGSS RDS(ON) VSD a a V 1 µA V nA mΩ V Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=25°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=8A ISD=16A, VGS=0V 7.5 10 0.8 1.3 1.8 30 2.5 ±100 9 Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b 12 1.3 Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd 39.6 VDS=10V, VGS=4.5V, IDS=12A 4.8 8.4 2 53 nC Gate-Source Charge Gate-Drain Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 www.anpec.com.tw APM4220K Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM4220K Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss www.DataSheet4U.com VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 2.4 1785 490 300 10 19 13 95 46 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Coss Crss td(ON) Tr td(OFF) Tf Notes: VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 7 69 32 ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM4220K Typical Characteristics Power Dissipation 2.5 15 Drain Current 2.0 12 Ptot - Power (W) www.DataSheet4U.com 1.5 ID - Drain Current (A) 9 1.0 6 0.5 o 3 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance im it ID - Drain Current (A) Rd 10 s( on )L 300µs 1ms Duty = 0.5 0.2 0.1 0.05 0.02 0.01 10ms 0.1 1 100ms 1s 0.01 Single Pulse 0.1 DC 0.01 0.01 TA=25 C 0.1 1 10 100 O 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 4 www.anpec.com.tw APM4220K Typical Characteristics (Cont.) Output Characteristics 50 VGS=4,5,6,7,8,9,10V 40 20 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 3V 16 www.DataSheet4U.com ID - Drain Current (A) 30 12 VGS=4.5V 20 2.5V 10 8 VGS=10V 4 0 0 2 4 6 8 10 0 0 10 20 30 40 50 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 50 1.6 1.4 Gate Threshold Voltage IDS =250µA 40 Normalized Threshold Voltage ID - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -2.


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