Document
APM4220K
N-Channel Enhancement Mode MOSFET
Features
• • • www.DataSheet4U.com • • •
25V/12A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant)
Pin Description
D D D D
S S S G
Top View of SOP − 8
( 5,6,7,8 ) DD DD
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S S S (1, 2, 3) (4) G
N-Channel MOSFET
Ordering and Marking Information
APM 4220 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code
APM 4220 K :
APM 4220 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw
APM4220K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS*
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(TA = 25°C unless otherwise noted)
Rating 25 ±20 VGS=10V 12 50 3 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 W °C/W A °C V A Unit
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
2
TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
APM4220K Min. Typ. Max.
Test Condition
Unit
Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed
ID=15A, VDD=15V 25
50
mJ
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS VGS(th) IGSS RDS(ON) VSD
a a
V 1 µA V nA mΩ V
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V TJ=25°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=8A ISD=16A, VGS=0V 7.5 10 0.8 1.3 1.8
30 2.5 ±100 9
Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
12
1.3
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd
39.6 VDS=10V, VGS=4.5V, IDS=12A 4.8 8.4
2
53 nC
Gate-Source Charge Gate-Drain Charge
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
Test Condition
APM4220K Min. Typ. Max.
Unit
Dynamic Characteristics RG Gate Resistance Ciss
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VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz
2.4 1785 490 300 10 19 13 95 46
Ω pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
Coss Crss td(ON) Tr
td(OFF) Tf
Notes:
VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
7 69 32
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Typical Characteristics
Power Dissipation
2.5 15
Drain Current
2.0
12
Ptot - Power (W)
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1.5
ID - Drain Current (A)
9
1.0
6
0.5
o
3
o
0.0
TA=25 C 0 20 40 60 80 100 120 140 160
0
TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2 1
Thermal Transient Impedance
im
it
ID - Drain Current (A)
Rd
10
s(
on )L
300µs 1ms
Duty = 0.5 0.2 0.1 0.05 0.02 0.01
10ms
0.1
1
100ms 1s
0.01
Single Pulse
0.1
DC
0.01 0.01
TA=25 C 0.1 1 10 100
O
1E-3 1E-4
Mounted on 1in pad o RθJA : 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Typical Characteristics (Cont.)
Output Characteristics
50 VGS=4,5,6,7,8,9,10V 40 20
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ)
3V
16
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ID - Drain Current (A)
30
12
VGS=4.5V
20 2.5V 10
8
VGS=10V
4
0
0
2
4
6
8
10
0
0
10
20
30
40
50
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
50
1.6 1.4
Gate Threshold Voltage
IDS =250µA
40
Normalized Threshold Voltage
ID - Drain Current (A)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -2.