APM4408

APM4408 N-Channel Enhancement Mode MOSFET Features 20V/21A, RDS(ON) = 3.5mΩ(typ.) @ VGS = 10V RDS(ON) = 5mΩ(typ.) @ VGS = 4.5V RDS(ON) = 8mΩ(typ.) @ VGS = 2.5V Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D High Density Cell Design www.DataSheet4U.com Reliable and Rugged SO-8 Package SO − 8 D Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G S Ordering and Marking Information APM 4408 H a n d lin g C o d e Tem p. R ange P ackage C ode N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 4408 K : APM 4408 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 21 60 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 1 www.anpec.com.tw APM4408 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG www.DataSheet4U.com (TA = 25°C unless otherwise noted) Rating 1.6 0.625 150 -55 to 150 80 W °...