APM4416

APM4416 N-Channel Enhancement Mode MOSFET Features www.DataSheet4U.com Pin Description SO-8 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Top View S S S G 1 2 3 4 8 7 6 5 D D D D Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G D Ordering and Marking Information APM 4416 H a n d lin g C o d e Tem p. R ange P ackage C ode S N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 4416 K : A P M 4416 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 8 32 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM4416 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG www.DataSheet4U.com (TA = 25°C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 W ...