APM9930

APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V www.DataSheet4U.com Pin Description APM9930 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9930C 1 2 3 4 8 7 6 5 D D D D P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V SO-8 D1 D1 SO-8 D Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package S1 S1 S2 G1 G1 G2 N-Channel MOSFET Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 N- and P-Channel MOSFET S2 D2 D2 P-Channel MOSFET Ordering and Marking Information APM9930/C Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM9930/C K : APM9930/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 1 www.anpec.com.tw APM9930/C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM www.DataSheet4U.com PD (TA = 25°C unless otherwise noted) N-Channel 20 ±12 15 30 P-Channel -20 ±12 -5 -10 2.5 W 1.0 150 -55 to 150 50 1.0 °C °C °C/W A V Unit Parameter Drain-Source...