Document
APM9932/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V
Pin Description
APM9932
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
S1 G1 S2 G2
APM9932C
1 2 3 4 8 7 6 5 D D D D
•
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P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON)
SO-8
D1 D1
SO-8
D
• • •
Reliable and Rugged SO-8 Package
G1 G1 G2
Applications
•
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G2
S1
S1
S2
N-Channel MOSFET
S2
N- and P-Channel MOSFET
D2
D2
P-Channel MOSFET
Ordering and Marking Information
APM9932/C
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel
APM9932/C K :
APM9932/C XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw
APM9932/C
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM
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(TA = 25°C unless otherwise noted)
N-Channel 20 ±16 15 30 P-Channel -20 ±12 -6 -10 2.5 W 1.0 150 -55 to 150 50 1.0 °C °C °C/W A V Unit
Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C
2.5
TJ TSTG RθjA
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter
(TA = 25°C unless otherwise noted)
APM9932/C Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -0.6 12 17 30 45 0.6 -0.6 20 -20 1 -1 1.3 -1.3 ±100 ±100 18 27 42 60 1.3 -1.3 V mΩ nA Typ. Max.
Test Condition
Unit
VGS=0V , IDS=250µA VDS=18V , VGS=0V VDS=-18V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V VGS=±12V , VDS=0V VGS=10V , IDS=9A VGS=4.5V , IDS=7A VGS=-4.5V , IDS=-6A VGS=-2.5V , IDS=-5A ISD=5A , VGS=0V ISD=-2A , VGS=0V
V µA V
Gate Leakage Current
RDS(ON)a
Drain-Source On-state Resistance
VSDa
Diode Forward Voltage
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
2
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APM9932/C
Electrical Characteristics (Cont.)
Symbol Dynamica Qg Qgs Qgd td(ON) Total Gate Charge N-Channel VDS=10V , IDS= 6A Gate-Source Charge VGS=4.5V P-Channel VDS=-4V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , Tr Turn-on Rise Time VGEN=4.5V , RG=10Ω P-Channel td(OFF) Tf Ciss Coss Crss Turn-off Delay Time VDD=-4V , IDS=-1A , VGEN=-4.5V , RG=10Ω Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VGS=0V , VDS=15V Frequency=1.0MHz P-Channel VGS=0V , VDS=-4V Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 19 5 4.1 2.8 1.6 6 23 5 45 16 45 5 32 1225 1400 330 520 220 320 pF 12 45 10 80 40 90 20 55 ns 22 25 nC Parameter
(TA = 25°C unless otherwise noted)
APM9932/C Min. Typ. Max.
Test Condition
Unit
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Gate-Drain Charge
Turn-on Delay Time
Notes
a
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
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APM9932/C
Typical Characteristics
N-Channel
Output Characteristics
20
VGS=3,4,5,6,7,8,9,10V
Transfer Characteristics
20
ID-Drain Current (A)
ID-Drain Current (A)
16
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VGS=2.5V
15
12
10
8
V GS=2V
TJ=125°C
5
TJ=25°C TJ=-55°C
4
0
0
2
4
6
8
10
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
On-Resistance vs. Drain Current
0.030
VGS(th)-Threshold Voltage (V) (Normalized)
1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance (Ω)
1.25
0.025 0.020 0.015 0.010 0.005 0.000
VGS=4.5V
V GS=10V
-25
0
25
50
75
100 125 150
0
4
8
12
16
20
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
4
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APM9932/C
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.16
ID=15A
On-Resistance vs. Junction Temperature
2.0
VGS=10V ID=15A
RDS(ON)-On-Resistance (Ω)
0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance (Ω) (Normalized)
0.14
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
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-25
0
25
50
75
100 125
150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
10
V DS=10V ID=6A
Capacitance
1800
.