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APM9932C Dataheets PDF



Part Number APM9932C
Manufacturers Anpec Electronics Coropration
Logo Anpec Electronics Coropration
Description Dual-Channel MOSFET
Datasheet APM9932C DatasheetAPM9932C Datasheet (PDF)

APM9932/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V Pin Description APM9932 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9932C 1 2 3 4 8 7 6 5 D D D D • www.DataSheet4U.com P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) SO-8 D1 D1 SO-8 D • • • Reliable and Rugged SO-8 Package G1 G1 G2 Applicatio.

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APM9932/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V Pin Description APM9932 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9932C 1 2 3 4 8 7 6 5 D D D D • www.DataSheet4U.com P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) SO-8 D1 D1 SO-8 D • • • Reliable and Rugged SO-8 Package G1 G1 G2 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 S1 S1 S2 N-Channel MOSFET S2 N- and P-Channel MOSFET D2 D2 P-Channel MOSFET Ordering and Marking Information APM9932/C Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM9932/C K : APM9932/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw APM9932/C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM www.DataSheet4U.com PD (TA = 25°C unless otherwise noted) N-Channel 20 ±16 15 30 P-Channel -20 ±12 -6 -10 2.5 W 1.0 150 -55 to 150 50 1.0 °C °C °C/W A V Unit Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C 2.5 TJ TSTG RθjA * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter (TA = 25°C unless otherwise noted) APM9932/C Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -0.6 12 17 30 45 0.6 -0.6 20 -20 1 -1 1.3 -1.3 ±100 ±100 18 27 42 60 1.3 -1.3 V mΩ nA Typ. Max. Test Condition Unit VGS=0V , IDS=250µA VDS=18V , VGS=0V VDS=-18V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V VGS=±12V , VDS=0V VGS=10V , IDS=9A VGS=4.5V , IDS=7A VGS=-4.5V , IDS=-6A VGS=-2.5V , IDS=-5A ISD=5A , VGS=0V ISD=-2A , VGS=0V V µA V Gate Leakage Current RDS(ON)a Drain-Source On-state Resistance VSDa Diode Forward Voltage Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 2 www.anpec.com.tw APM9932/C Electrical Characteristics (Cont.) Symbol Dynamica Qg Qgs Qgd td(ON) Total Gate Charge N-Channel VDS=10V , IDS= 6A Gate-Source Charge VGS=4.5V P-Channel VDS=-4V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , Tr Turn-on Rise Time VGEN=4.5V , RG=10Ω P-Channel td(OFF) Tf Ciss Coss Crss Turn-off Delay Time VDD=-4V , IDS=-1A , VGEN=-4.5V , RG=10Ω Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VGS=0V , VDS=15V Frequency=1.0MHz P-Channel VGS=0V , VDS=-4V Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 19 5 4.1 2.8 1.6 6 23 5 45 16 45 5 32 1225 1400 330 520 220 320 pF 12 45 10 80 40 90 20 55 ns 22 25 nC Parameter (TA = 25°C unless otherwise noted) APM9932/C Min. Typ. Max. Test Condition Unit www.DataSheet4U.com Gate-Drain Charge Turn-on Delay Time Notes a : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 3 www.anpec.com.tw APM9932/C Typical Characteristics N-Channel Output Characteristics 20 VGS=3,4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) ID-Drain Current (A) 16 www.DataSheet4U.com VGS=2.5V 15 12 10 8 V GS=2V TJ=125°C 5 TJ=25°C TJ=-55°C 4 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.030 VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 1.25 0.025 0.020 0.015 0.010 0.005 0.000 VGS=4.5V V GS=10V -25 0 25 50 75 100 125 150 0 4 8 12 16 20 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 4 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.16 ID=15A On-Resistance vs. Junction Temperature 2.0 VGS=10V ID=15A RDS(ON)-On-Resistance (Ω) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 0.14 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 www.DataSheet4U.com -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 V DS=10V ID=6A Capacitance 1800 .


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