Power MOSFET
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250...
Description
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250 V
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
54
Qgs (nC)
9.2
Qgd (nC)
26
Configuration
Single
0.240
I2PAK (TO-262)
TO-220
D
S D G
D2PAK (TO-263)
S D G
G
GD S
S N-Channel MOSFET
FEATURES Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resis...
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