SiHF710

Power MOSFET IRF710, SiHF710 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 17 3.4 8.5 Single D TO-220AB 3.6 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF710PbF SiHF710-E3 IRF710 SiHF710 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mo...