Document
Power MOSFET
IRF820, SiHF820
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 3.3 13 Single
3.0
TO-220AB
D
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRF820PbF SiHF820-E3 IRF820 SiHF820
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD 2.5 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 500 ± 20 2.5 1.6 8.0 0.40 210 2.5 5.0 50 3.5
- 55 to + 150 300d 10 1.1
UNIT
V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91059 S11-0507-Rev. C, 21-Mar-11
www.vishay.com 1
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820, SiHF820
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 2.5
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 A
500 -
-V
- 0.59 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 3.0
1.5 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b
VDD = 250 V, ID = 2.1 A, Rg = 18 , RD = 100 , see fig. 10b
-
360 92 - pF 37 - 24 - 3.3 nC - 13 8.0 8.6 -
ns 33 16 -
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of G
LS die contact S
- 4.5 nH
- 7.5 -
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta
IS ISM
MOSFET symbol
showing the integral reverse p - n junction diode
D
G S
- - 2.5 A
- - 8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
trr
- 260 520 ns TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/s
Body Diode Reverse Recovery Charge
Qrr
- 0.7 1.4 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com 2
Document Number: 91059 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF820, SiHF820
Vishay Siliconix
ID, Drain Current (A)
VGS Top 15 V
10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 100
10-1 100
91059_01
4.5 V
20 µs Pulse Width TC = 25 °C 101 VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
ID, Drain Curren.