SiHF820A

Power MOSFET IRF820A, SiHF820A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration Single 3.0 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half bridge Full bridge TO-220AB IRF820APbF SiHF820A-E3 IRF820A SiHF820A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = ...