IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) () Qg (...
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
17 4.3 8.5 Single
I2PAK (TO-262)
D2PAK (TO-263)
3.0 D
G
SD
D G
S
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
G
S N-Channel MOSFET
D2PAK (TO-263) SiHF820AS-GE3 IRF820ASPbF SiHF820AS-E3
FEATURES Halogen-free According to IEC 61249-2-21
Definition Low Gate Charge Qg Results in Simple Drive
Requirement Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Fully Characterized Capacitance and Avalanche
Voltage and Current Effective Coss specified Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching
TYPICAL SMPS TOPOLOGIES Two
Transistor Forward Half Bridge and Full Bridge
I2PAK (TO-262) SiHF820AL-GE3 IRF820ALPbF SiHF820AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mount...