SiHF830AS

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.40 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High speed power switching TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge and Full Bridge ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF830AS-GE3 IRF830ASPbF SiHF830AS-E3 D2PAK (TO-263) SiHF830ASTRL-GE3a IRF830ASTRLPbFa SiHF830ASTL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TA = 25 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Reco...