SiHF840AS

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 9.0 18 Single I2PAK (TO-262) D2PAK (TO-263) 0.85 D G SD D G S G S N-Channel MOSFET FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge Full Bridge ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF840AS-GE3 Lead (Pb)-free IRF840ASPbF SiHF840AS-E3 Note a. See device orientation. D2PAK (TO-263) SiHF840ASTRL-GE3a IRF840ASTRLPbFa SiHF840ASTL-E3a D2PAK (TO-263) SiHF840ASTRR-GE3a IRF840ASTRRPbFa SiHF840ASTR-E3a I2PAK (TO-262) SiHF840AL-GE3a IRF840ALPbF SiHF840AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recov...