Power MOSFET
Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Description
Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 200 VGS = - 10 V
22 12 10 Single
1.5
TO-220AB
S
G
S D G
D P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C VGS at - 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Maximum Power Dissipation Peak Diode Recovery dV/dtb
TC = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junctio...
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