SiHF9640

www.vishay.com IRF9640, SiHF9640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) () VGS = -10 V Qg max. (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single 0.50 S TO-220AB G FEATURES Dynamic dV/dt rating Repetitive avalanche rated Available P-channel Fast switching Available Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION S D G D P-Channel MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Li...