SiHFB9N65A

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 48 12 19 Single D FEATURES 650 0.93 Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Lead (Pb)-free Available www.DataSheet4U.com TO-220 APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply G High Speed Power Switching S G D S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES Single Transistor Flyback Single Transistor Forward ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB9N65APbF SiHFB9N65A-E3 IRFB9N65A SiHFB9N65A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 650 ± 30 8.5 5.4 21 1.3 325 5.2 16 167 2.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limi...