IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max...
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
23 5.4 11 Single
I2PAK (TO-262) D2PAK (TO-263)
2.2
D
G D S
G
S N-Channel MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition Low Gate Charge Qg Results in Simple Drive
Requirement Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Fully Characterized Capacitance and Avalanche Voltage
and Current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching
TYPICAL SMPS TOPOLOGIES Single
Transistor Flyback
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3
Lead (Pb)-free
IRFBC30ASPbF SiHFBC30AS-E3
Note a. See device orientation.
D2PAK (TO-263) SiHFBC30ASTRL-GE3a IRFBC30ASTRLPbFa SiHFBC30ASTL-E3a
D2PAK (TO-263) SiHFBC30ASTRR-GE3a IRFBC30ASTRRPbFa SiHFBC30ASTR-E3a
I2PAK (TO-262) SiHFBC30AL-GE3 IRFBC30ALPbF SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e
TC = 25 °C
...