SiHFBC30L

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 Surface Mount (IRFBC30S, SiHFBC30S) Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBC30SPbF SiHFBC30S-E3 IRFBC30S SiHFBC30S D2PAK (TO-263) IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) IRFBC30LPbF SiHFBC30L-E3 IRFBC30L SiHFBC30L ABSOLUTE MAXIM...