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SiHFBC30S Dataheets PDF



Part Number SiHFBC30S
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC30S DatasheetSiHFBC30S Datasheet (PDF)

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available Available RoHS.

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBC30SPbF SiHFBC30S-E3 IRFBC30S SiHFBC30S D2PAK (TO-263) IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) IRFBC30LPbF SiHFBC30L-E3 IRFBC30L SiHFBC30L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TA = 25 °C TC = 25 °C VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg for 10 s LIMIT 600 ± 20 3.6 2.3 14 0.59 290 3.6 7.4 3.1 74 3.0 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12). c. ISD ≤ 3.6 A, dI/dt ≤ 60 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC30/SiHFBC30 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91111 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 1 WORK-IN-PROGRESS IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB Mounted, steady-state)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). For recommended footprint and soldering techniques refer to application note #AN-994. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER www.DataSheet4U.com Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LS VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mAc VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 2.2 Ab Ac 600 2.0 2.5 0.62 - 4.0 ± 100 100 500 2.2 - V V/°C V nA µA Ω S VDS = 50 V, ID = 2.2 VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c - 660 86 19 11 13 35 14 7.5 31 4.6 17 nH ns nC pF VGS = 10 V ID = 3.6 A, VDS = 360 V, see fig. 6 and 13b, c - VDD = 300 V, ID = 3.6 A, RG = 12 Ω, RD = 82 Ω, see fig. 10b, c - Between lead, and center of die contcat - - 370 2.0 3.6 A 14 1.6 810 4.2 V ns µC G S TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb, c Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFBC30/SiHFBC30 data and test conditions. www.vishay.com 2 Document Number: 91111 S-Pending-Rev. A, 10-Jun-08 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix TYPICAL.


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