SiHFD123

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 7.7 Single D FEATURES 100 0.27 Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 °C Operating Temperature Fast Switching Ease of Paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFD123PbF SiHFD123-E3 IRFD123 SiHFD123 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) VGS at 10 V TC = 25 °C TC = 100 °C SYMB...