Document
IRFD214, SiHFD214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 8.2 1.8 4.5 Single
D
FEATURES
250 2.0
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
HEXDIP
DESCRIPTION
G
S D
G S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb HEXDIP IRFD214PbF SiHFD214-E3 IRFD214 SiHFD214
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 28 mH, RG = 25 Ω, IAS = 1.8 A (see fig. 12). c. ISD ≤ 2.7 A, dI/dt ≤ 65 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91130 S-Pending-Rev. A, 29-May-08 www.vishay.com 1 TC = 25 °C Energyb EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 250 ± 20 0.45 0.29 3.6 0.0083 57 0.45 0.10 1.0 4.8 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V
WORK-IN-PROGRESS
IRFD214, SiHFD214
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient SYMBOL RthJA TYP. MAX. 120 UNIT °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient www.DataSheet4U.com Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 0.27 Ab
250 2.0 0.90
0.39 -
4.0 ± 100 25 250 2.0 -
V V/°C V nA µA Ω S
VDS = 50 V, ID = 1.6 A
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
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140 42 9.6 7.0 7.6 16 7.0 4.0 6.0
8.2 1.8 4.5 nH ns nC pF
VGS = 10 V
ID = 2.7 A, VDS = 200 V, see fig. 6 and 13b
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VDD = 125 V, ID = 2.7 A, RG = 24 Ω, RD = 45 Ω, see fig. 10b
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Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
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190 0.64
0.45 A 3.6 2.0 390 1.3s V ns µC
G
S
TJ = 25 °C, IS = 0.45 A, VGS = 0 Vb TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91130 S-Pending-Rev. A, 29-May-08
IRFD214, SiHFD214
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91130 S-Pending-Rev. A, 29-May-08
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IRFD214, SiHFD214
Vishay Siliconix
www.DataSheet4U.com
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91130 S-Pending-Rev. A, 29-May-08
IRFD214, SiHFD214
Vishay Siliconix
RD
VDS VGS RG
D.U.T. + - VDD
10 V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Cir.