SiHFIB7N50L

IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 92 24 44 Single 0.320 TO-220 FULLPAK D G GDS ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET FEATURES Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Reqirements RoHS COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Lead (Pb)-free APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications TO-220 FULLPAK IRFIB7N50LPbF SiHFIB7N50L-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 14)....