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SiHFIZ44G Dataheets PDF



Part Number SiHFIZ44G
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFIZ44G DatasheetSiHFIZ44G Datasheet (PDF)

Power MOSFET IRFIZ44G, SiHFIZ44G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.028 D TO-220 FULLPAK FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available G GDS S N-Channel MOSFET ORDERI.

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Power MOSFET IRFIZ44G, SiHFIZ44G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.028 D TO-220 FULLPAK FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRFIZ44GPbF SiHFIZ44G-E3 IRFIZ44G SiHFIZ44G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A (see fig. 12). c. ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply LIMIT 60 ± 20 30 21 120 0.32 100 48 4.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m Document Number: 91189 S09-0010-Rev. A, 19-Jan-09 www.vishay.com 1 IRFIZ44G, SiHFIZ44G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) RthJA RthJC TYP. - MAX. 65 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 18 Ab VDS = 25 V, ID = 18 Ab 60 - - V - 0.060 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 µA - - 250 - - 0.028 Ω 15 - - S Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Ciss Coss Crss C VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 f = 1.0 MHz - 2500 - - 1200 - pF - 200 - - 12 - Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf - VGS = 10 V ID = 52 A, VDS = 48 V, see fig. 6 and 13b - - - 95 - 27 nC - 46 VDD = 30 V, ID = 52 A, RG = 9.1 Ω, RD= 0.54 Ω, see fig. 10b - 19 - - 120 - ns - 55 - - 86 - Internal Drain Inductance Internal Source Inductance LD Between lead, D 6 mm (0.25") from package and center of G LS die contact S - 4.5 - nH - 7.5 - Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS D showing the Pulsed Diode Forward Currenta ISM integral reverse p - n junction diode G S Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 Vb - - 30 A - - 120 - - 2.5 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr - 140 300 ns TJ = 25 °C, IF = 52 A, dI/dt = 100 A/µsb Qrr - 1.2 2.8 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91189 S09-0010-Rev. A, 19-Jan-09 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted IRFIZ44G, SiHFIZ44G Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91189 S09-0010-Rev. A, 19-.


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