Document
Power MOSFET
IRFIZ44G, SiHFIZ44G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
95 27 46 Single
0.028
D TO-220 FULLPAK
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFIZ44GPbF SiHFIZ44G-E3 IRFIZ44G SiHFIZ44G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A (see fig. 12). c. ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT 60 ± 20 30 21 120 0.32 100 48 4.5
- 55 to + 175 300d 10 1.1
UNIT V
A
W/°C mJ W V/ns °C
lbf · in N·m
Document Number: 91189 S09-0010-Rev. A, 19-Jan-09
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IRFIZ44G, SiHFIZ44G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
RthJA RthJC
TYP. -
MAX. 65 3.1
UNIT °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS ΔVDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 18 Ab
VDS = 25 V, ID = 18 Ab
60
-
-
V
-
0.060
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.028 Ω
15
-
-
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Ciss Coss Crss
C
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
2500
-
-
1200
-
pF
-
200
-
-
12
-
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qg Qgs Qgd td(on)
tr td(off)
tf
-
VGS = 10 V
ID = 52 A, VDS = 48 V, see fig. 6 and 13b
-
-
-
95
-
27
nC
-
46
VDD = 30 V, ID = 52 A, RG = 9.1 Ω, RD= 0.54 Ω,
see fig. 10b
-
19
-
-
120
-
ns
-
55
-
-
86
-
Internal Drain Inductance Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current
IS
D
showing the
Pulsed Diode Forward Currenta
ISM
integral reverse p - n junction diode
G S
Body Diode Voltage
VSD
TJ = 25 °C, IS = 30 A, VGS = 0 Vb
-
-
30
A
-
-
120
-
-
2.5
V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
-
140
300
ns
TJ = 25 °C, IF = 52 A, dI/dt = 100 A/µsb
Qrr
-
1.2
2.8
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91189 S09-0010-Rev. A, 19-Jan-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFIZ44G, SiHFIZ44G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91189 S09-0010-Rev. A, 19-.