Document
Power MOSFET
IRFIZ14G, SiHFIZ14G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
TO-220 FULLPAK
D
GDS
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
Available
RoHS*
COMPLIANT
• 175 °C Operating Temperature
• Dynamic dv/dt Rating
• Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFIZ14GPbF SiHFIZ14G-E3 IRFIZ14G SiHFIZ14G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 1.47 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90224 S10-2325-Rev. C, 11-Oct-10
LIMIT
60 ± 20 8.0 5.7 32 0.18 47 27 4.5 - 55 to + 175 300d 10 1.1
UNIT V
A
W/°C mJ W V/ns °C
lbf · in N·m
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IRFIZ14G, SiHFIZ14G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
RthJA RthJC
TYP. -
MAX. 65 5.5
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
Ciss Coss Crss
C
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = 20
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 25 V, ID = 4.8 Ab
VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 f = 1.0 MHz
60 -
-V
- 0.63 - V/°C
2.0 - 4.0 V
- - 100 nA
- - 25 µA
- - 250
-
-
0.20
2.2 -
-S
- 300 - 160 -
pF - 29 - 12 -
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qg
Qgs
Qgd td(on)
tr td(off)
tf
VGS = 10 V
ID = 10 A, VDS = 48 V, see fig. 6 and 13b
VDD = 30 V, ID = 10 A Rg = 24 , RD = 2.7, see fig. 10b
-
- 11 - 3.1 nC - 5.8 10 50 -
ns 13 19 -
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta
IS
MOSFET symbol showing the
integral reverse ISM p - n junction diode
D
G S
- - 8.0 A
- - 32
Body Diode Voltage
VSD TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb - - 1.6 V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 10 A, di/dt = 100 A/µsb
-
70 140 ns
Body Diode Reverse Recovery Charge
Qrr
- 0.20 0.40 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 µs; duty cycle 2 %.
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Document Number: 90224 S10-2325-Rev. C, 11-Oct-10
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFIZ14G, SiHFIZ14G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90224 S10-2325-Rev. C, 11-Oct-10
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IRFIZ14G, SiHFIZ14G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode .