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SiHFIZ14G Dataheets PDF



Part Number SiHFIZ14G
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFIZ14G DatasheetSiHFIZ14G Datasheet (PDF)

Power MOSFET IRFIZ14G, SiHFIZ14G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 TO-220 FULLPAK D GDS G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm Available RoHS* COMPLIANT • 175 °C Operating Temperature • Dynamic dv/dt Rating • Low Thermal .

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Power MOSFET IRFIZ14G, SiHFIZ14G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 TO-220 FULLPAK D GDS G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm Available RoHS* COMPLIANT • 175 °C Operating Temperature • Dynamic dv/dt Rating • Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRFIZ14GPbF SiHFIZ14G-E3 IRFIZ14G SiHFIZ14G ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 1.47 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 LIMIT 60 ± 20 8.0 5.7 32 0.18 47 27 4.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m www.vishay.com 1 IRFIZ14G, SiHFIZ14G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) RthJA RthJC TYP. - MAX. 65 5.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss C VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = 20 VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 4.8 Ab VDS = 25 V, ID = 4.8 Ab VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 f = 1.0 MHz 60 - -V - 0.63 - V/°C 2.0 - 4.0 V - - 100 nA - - 25 µA - - 250 - - 0.20  2.2 - -S - 300 - 160 - pF - 29 - 12 - Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VGS = 10 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b VDD = 30 V, ID = 10 A Rg = 24 , RD = 2.7, see fig. 10b - - 11 - 3.1 nC - 5.8 10 50 - ns 13 19 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 nH - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta IS MOSFET symbol showing the integral reverse ISM p - n junction diode D G S - - 8.0 A - - 32 Body Diode Voltage VSD TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb - - 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 10 A, di/dt = 100 A/µsb - 70 140 ns Body Diode Reverse Recovery Charge Qrr - 0.20 0.40 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 µs; duty cycle  2 %. www.vishay.com 2 Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFIZ14G, SiHFIZ14G Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 www.vishay.com 3 IRFIZ14G, SiHFIZ14G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode .


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