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SiHFI820G Dataheets PDF



Part Number SiHFI820G
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFI820G DatasheetSiHFI820G Datasheet (PDF)

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 3.3 13 Single D FEATURES 500 3.0 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay pr.

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IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 3.3 13 Single D FEATURES 500 3.0 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI820GPbF SiHFI820G-E3 IRFI820G SiHFI820G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 20 2.1 1.3 8.4 0.24 110 2.1 3.0 30 3.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 44 mH, RG = 25 Ω, IAS = 2.1 A (see fig. 12). c. ISD ≤ 2.1 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91158 S-81290-Rev. A, 16-Jun-08 www.vishay.com 1 IRFI820G, SiHFI820G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 65 4.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage www.DataSheet4U.com VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1.3 Ab VDS = 50 V, ID = 1.3 Ab 500 2.0 1.5 0.59 - 4.0 ± 100 25 250 3.0 - V V/°C V nA µA Ω S Ciss Coss Crss C Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 f = 1.0 MHz ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b - 360 92 37 12 8.0 8.6 33 16 4.5 7.5 24 3.3 13 nH ns nC pF VGS = 10 V - VDD = 250 V, ID = 2.1 A , RG = 18 Ω, RD = 120 Ω, see fig. 10b - Between lead, 6 mm (0.25") from package and center of die contact D - G S - 260 0.70 2.1 A 8.0 1.6 520 1.4 V ns µC G S TJ = 25 °C, IS = 2.1 A, VGS = 0 Vb TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91158 S-81290-Rev. A, 16-Jun-08 IRFI820G, SiHFI820G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted www.DataSheet4U.com Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91158 S-81290-Rev. A, 16-Jun-08 www.vishay.com 3 IRFI820G, SiHFI820G Vishay Siliconix www.DataSheet4U.com Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode F.


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