Power MOSFET
IRFI9630G, SiHFI9630G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
IRFI9630G, SiHFI9630G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 29 5.4 15 Single
S
FEATURES
Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm P-Channel Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available
Available
0.80
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
G
G D S
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI9630GPbF SiHFI9630G-E3 IRFI9630G SiHFI9630G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Pow...
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