www.vishay.com
IRFP048R, SiHFP048R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 38 Single
0.018
D
TO-247AC
G
S
D G
S N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Isolated central mounting hole
• 175 °C operating temperature
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package Lead (Pb)-free
TO-247AC IRFP048RPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current e Continuous Drain Current Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energy b Maximum Power Dissipation Peak Diode Recovery dV/dt c
TC = 25 °C
EAS PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 73 A (see fig. 12). c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. Current limited by the package (die current = 73 A)
LIMIT 60 ± 20 70 52 290 1.3 200 190 4.5
-55 to +175 300 10 1.1
UNIT V
A
W/°C mJ W V/ns °C
lbf · in N·m
S16-0015-Rev. C, 18-Jan-16
1
Document Number: 91199
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFP048R, SiHFP048R
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.24 -
MAX. 40 0.80
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 44 A b
VDS = 25 V, ID = 44 A b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 72 A, VDS = 48 V see fig. 6 and 13 b
VDD = 30 V, ID = 72 A, Rg = 9.1 , RD = 0.34, see fig. 10 b
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
MIN.
60 2.0 20
-
-
-
TYP. MAX. UNIT
0.060
-
4.0 ± 100 25 250 0.018 -
V V/°C
V nA
μA
S
2400 1300 190
8.1 250 210 250
5.0
110 29 38 -
-
13 -
pF nC ns nH
Continuous Source-Drain Diode Current Pulsed Diode Forward Current a
IS
MOSFET symbol showing the
integral reverse ISM p - n junction diode
D
G S
- - 70c A
- - 290
Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
VSD
TJ = 25 °C, IS = 73 A, VGS = 0 V b
- - 2.0 V
trr Qrr
- 120 180 ns TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs b - 0.50 0.80 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Current limited by the package (die current = 73 A).
S16-0015-Rev. C, 18-Jan-16
2
Document Number: 91199
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP048R, SiHFP04.