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SiHFP048R Dataheets PDF



Part Number SiHFP048R
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFP048R DatasheetSiHFP048R Datasheet (PDF)

www.vishay.com IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 38 Single 0.018 D TO-247AC G S D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation.

  SiHFP048R   SiHFP048R


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www.vishay.com IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 38 Single 0.018 D TO-247AC G S D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFP048RPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current e Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energy b Maximum Power Dissipation Peak Diode Recovery dV/dt c TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 73 A (see fig. 12). c. ISD  72 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. e. Current limited by the package (die current = 73 A) LIMIT 60 ± 20 70 52 290 1.3 200 190 4.5 -55 to +175 300 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m S16-0015-Rev. C, 18-Jan-16 1 Document Number: 91199 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFP048R, SiHFP048R Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC TYP. - 0.24 - MAX. 40 0.80 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 44 A b VDS = 25 V, ID = 44 A b Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 72 A, VDS = 48 V see fig. 6 and 13 b VDD = 30 V, ID = 72 A, Rg = 9.1 , RD = 0.34, see fig. 10 b Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S Drain-Source Body Diode Characteristics MIN. 60 2.0 20 - - - TYP. MAX. UNIT 0.060 - 4.0 ± 100 25 250 0.018 - V V/°C V nA μA  S 2400 1300 190 8.1 250 210 250 5.0 110 29 38 - - 13 - pF nC ns nH Continuous Source-Drain Diode Current Pulsed Diode Forward Current a IS MOSFET symbol showing the  integral reverse ISM p - n junction diode D G S - - 70c A - - 290 Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time VSD TJ = 25 °C, IS = 73 A, VGS = 0 V b - - 2.0 V trr Qrr - 120 180 ns TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs b - 0.50 0.80 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Current limited by the package (die current = 73 A). S16-0015-Rev. C, 18-Jan-16 2 Document Number: 91199 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFP048R, SiHFP04.


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