Power MOSFET
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd ...
Description
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
150 46 64 Single
0.27
TO-247AC
D
G
S D G
ORDERING INFORMATION
Package Lead (Pb)-free
S N-Channel MOSFET
SnPb
FEATURES
Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications
Lower Gate Charge Results in Simple Drive Requirements
Available
RoHS*
COMPLIANT
Enhanced dV/dt Capabilities Offer Improved Ruggedness
Higher Gate Voltage Threshold Offers Improved Noise Immunity
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications
TO-247AC IRFP21N60LPbF SiHFP21N60L-E3 IRFP21N60L SiHFP21N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T...
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