SiHFP26N60L

www.vishay.com IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 180 61 85 Single 0.21 D TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Superfast body diode eliminates the need for external diodes in ZVS applications Available Lower gate charge results in simpler drive Available requirements Enhanced dV/dt capabilities offer improved ruggedness Higher gate voltage threshold offers improved noise immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS Zero voltage switching (SMPS) Telecom and server power supplies Uninterruptible power supplies Motor control applications TO-247AC IRFP26N60LPbF SiHFP26N60L-E3 IRFP26N60L SiHFP26N60L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c VGS at 10 V ...