SiHFP27N60K

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 56 86 Single D FEATURES 600 0.18 Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Enhanced Body Diode dV/dt Capability Lead (Pb)-free Available www.DataSheet4U.com TO-247 APPLICATIONS Hard Switching Primary or PFC Switch G Switch Mode Power Supply (SMPS) Uninterruptible Power Supply S N-Channel MOSFET S D G High Speed Power Switching Motor Drive ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 30 27 18 110 4.0 EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw 530 27 50 500 13 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; ...