Power MOSFET
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (...
Description
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 190 59 84 Single
D
FEATURES
500 0.135
Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness
Available
Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Low RDS(on) Lead (Pb)-free Available
www.DataSheet4U.com
TO-247
G
APPLICATIONS
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply
S N-Channel MOSFET
S D G
High Speed Power Switching Hard Switching and High Frequency Circuits
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP32N50KPbF SiHFP32N50K-E3 IRFP32N50K SiHFP32N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc for 10 s 6-32 or M3 screw Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 32 20 130 3.7 450 32 46 460 13 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junc...
Similar Datasheet