TSM7401

TSM7401 20V N-Channel MOSFET w/ESD Protected Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 4.5A =20mΩ RDS (on), Vgs @ 2.7V, Ids @ 3.5A =25mΩ www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM7401CS Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 20V ± 12 8 30 2.5 1.3 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. Symbol Rθjf Rθja Limit 30 50 Unit o o C/W C/W TSM7401 1-1 2003/12 rev. A Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance www.DataSheet4U.com Conditions VGS = 0V, ID = 250uA VGS = 4.5V, ID = 4.5A VGS = 2.7V, ID = 3.5A VD...