USM8J48A

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G48,USM8G48,SM8J48,USM8J48 SM8G48A,USM8G48A,SM8J48A,USM8J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage l R.M.S On−State Current l Gate Trigger Current : IGT = 30mA Max. : IGT = 20mA Max. (“A”Type) www.DataSheet4U.com : VDRM = 400, 600V : IT (RMS) = 8A Unit: mm SM8G48, SM8J48, SM8G48A, SM8J48A USM8G48, USM8J48, USM8G48A, USM8J48A JEDEC JEITA TOSHIBA ― ― 13-10J1A JEDEC JEITA TOSHIBA ― ― 13-10J2A Weight: 1.7g MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage (U)SM8G48 (U)SM8G48A (U)SM8J48 (U)SM8J48A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT V 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 −40~125 −40~125 A A A s A / µs W W V A °C °C 2 R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-10 SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I (U)SM8G48 (U)SM8J48 www.DataSheet4U.com SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+), Gate (...